Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2007-12-19
2009-12-29
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C257S043000, C257SE21370, C257SE27014
Reexamination Certificate
active
07638360
ABSTRACT:
A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
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European Search Report dated Aug. 14, 2008 for Application No. 08150763.4-1528.
Hwang Euk-che
Jung Ji-sim
Kim Jun-seong
Kim Tae-sang
Kwon Jang-yeon
Cantor & Colburn LLP
Everhart Caridad M
Samsung Electronics Co,. Ltd.
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