Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2007-06-08
2010-06-22
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257SE29094
Reexamination Certificate
active
07741637
ABSTRACT:
Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers2to6are epitaxially grown on an MgxZn1-xO (0≦x<1) substrate1having a +C surface (0001), as a main surface, inclined at least in an m-axis direction. A p-electrode8is formed on the ZnO-based semiconductor layer5, and an n-electrode9is formed on the underside of the MgxZn1-xO substrate1. Thereby, steps regularly arranged in the m-axis direction can be formed on the surface of the MgxZn1-xO substrate1, and a phenomenon called step bunching is prevented. Consequently, the flatness of a film of the semiconductor layers laminated on the substrate1can be improved.
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Akasaka Shunsuke
Kawasaki Masashi
Nakahara Ken
Ohtomo Akira
Tamura Kentaro
Rabin & Berdo PC
Rohm & Co., Ltd.
Smith Matthew
Swanson Walter H
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