Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2007-01-02
2007-01-02
Flynn, Nathan J. (Department: 2826)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C257S043000, C257SE33064
Reexamination Certificate
active
10500703
ABSTRACT:
On the surface of a substrate1, a precursory buffer layer2′ composed of an In-base compound or a Zn-base compound, not contained in the substrate1, is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the precursory buffer layer2′ is annealed for re-crystallization to thereby convert it into a buffer layer2. This successfully provides a Zn-base semiconductor light emitting device which can readily be fabricated and capable of improving quality of the light emitting region, and a method of fabricating the same.
REFERENCES:
patent: 6664565 (2003-12-01), Sano et al.
patent: 54-162688 (1979-12-01), None
patent: 07-058360 (1995-03-01), None
patent: 8-264899 (1996-10-01), None
patent: 9-172199 (1997-06-01), None
patent: 2000-244014 (2000-09-01), None
patent: 2001-68485 (2001-03-01), None
patent: 2001-168392 (2001-06-01), None
Flynn Nathan J.
Quinto Kevin
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
Snider & Associates
LandOfFree
Zn-base semiconductor light-emitting device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Zn-base semiconductor light-emitting device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zn-base semiconductor light-emitting device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3789005