Zn-base semiconductor light-emitting device and method for...

Details Zn-base semiconductor light-emitting device and method for... Zn-base semiconductor light-emitting device and method for...

2007-01-02

2007-01-02

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C257S043000, C257SE33064

Reexamination Certificate

active

10500703

ABSTRACT:
On the surface of a substrate1, a precursory buffer layer2′ composed of an In-base compound or a Zn-base compound, not contained in the substrate1, is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the precursory buffer layer2′ is annealed for re-crystallization to thereby convert it into a buffer layer2. This successfully provides a Zn-base semiconductor light emitting device which can readily be fabricated and capable of improving quality of the light emitting region, and a method of fabricating the same.

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