Zinc blende type CrSb compound, method for fabricating the...

Details Zinc blende type CrSb compound, method for fabricating the... Zinc blende type CrSb compound, method for fabricating the...

2005-03-01

2005-03-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S200000, C257S201000, C257S198000, C438S603000, C438S604000

Reexamination Certificate

active

06861342

ABSTRACT:
An underlayer made of a III-V semiconductor compound is formed on a given substrate, and a CrSb compound is epitaxially grown on the underlayer by means of MBE method to fabricate a zinc blend type CrSb compound.

REFERENCES:
patent: 5464990 (1995-11-01), Shiratsuki et al.
patent: 5563019 (1996-10-01), Blanchet-Fincher
patent: 6294308 (2001-09-01), Caspar et al.
Zhao, J. H. et al., “Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy,” Applied Physics Letters, vol. 79, No. 17, Oct. 22, 2001, pp. 2776-2778.
Dohnomae, Hitoshi, “X-Ray Diffraction and Electron Microscopy Study of Cr/Sb Multilayered Films,” Japanese Journal of Applied Physics, Part 1, No. 3A, Mar. 1994, pp. 1499-1508.
Radhakrishna, P. et al., “Inelastic-neutron-scattering studies of spin-wave excitations in the pnictides MnSb and CrSb,” Physical Review B, vol. 54, No. 17, Nov. 1, 1996, pp. 11949-11943.
Dohnomae, H. et al., “Structural and magnetic properties of Cr/Sb multilayers,” Applied Surface Science 60/61 (1992), pp. 807-812.

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