Zig-zag V-MOS transistor structure

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29571, 29580, 156647, 156662, 357 55, 357 60, 357 68, H01L 21302, H01L 2904, H01L 2978

Patent

active

044384483

ABSTRACT:
A zig-zag V-groove configuration for use in V-MOS transistors is disclosed. Instead of merely forming parallel rows of V-grooves, a zig-zag configuration is used, utilizing two different directions for the V-grooves, at least one of which is not the conventional <011> direction. This configuration can be used with either the ladder or interdigitated configuration for the source contact and gate metals.

REFERENCES:
patent: 3354007 (1967-11-01), Michelitsch
patent: 3414781 (1968-12-01), Dill
patent: 3793712 (1974-02-01), Bean et al.
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3986200 (1976-10-01), Allison
patent: 4017885 (1977-04-01), Kendall et al.
patent: 4029531 (1977-06-01), Marinelli
patent: 4070690 (1978-01-01), Wickstrom
patent: 4145703 (1979-03-01), Blanchard et al.
patent: 4172005 (1979-10-01), Maraoka et al.

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