Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-03-07
2006-03-07
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189090, C365S149000
Reexamination Certificate
active
07009864
ABSTRACT:
Ferroelectric memory devices and methods are provided, wherein a cell plateline signal is applied to a ferroelectric target cell capacitor and a zero cancellation capacitor is coupled with a bitline during a memory read operation. A negative pulse is applied to the zero cancellation capacitor during the cell plateline pulse to reduce the voltage on the bitline, thereby facilitating reduced cell plateline voltage levels while still allowing a high percentage of the ferroelectric saturation voltage to be applied across the ferroelectric cell capacitor.
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Brady III W. James
Garner Jacqueline J.
Lam David
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