Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-07-17
2007-07-17
Coleman, William David (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C585S666000, C427S255280
Reexamination Certificate
active
10703854
ABSTRACT:
The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4(wherein R1represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.
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Nakagawa Hideo
Ogihara Tsutomu
Sasago Masaru
Yagihashi Fujio
Coleman William David
Myers Bigel Sibley & Sajovec P.A.
Shin-Etsu Chemical Co. , Ltd.
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