Zeolite films for low k applications

Details Zeolite films for low k applications Zeolite films for low k applications

2006-09-19

2006-09-19

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S967000

Reexamination Certificate

active

07109130

ABSTRACT:
A method is provided for making an integrated circuit dielectric. A structure-directing agent (SDA) is provided. Preferably this structure-directing agent is a salt of a polycyclic organic compound. By use of the structure-directing agent, a film of a zeolite having a framework density below 15 T atoms per 1000 cubic angstroms and comprising primarily silicon and/or germanium atoms in the T positions is provided on a semiconductor substrate. Preferably the zeolite has the LTA structure. The structure-directing agent is removed from the film. The removal may be effected, for example, by heating or by chemically and/or photochemically decomposing the structure-directing agent, preferably in a manner which allows it to be recovered. The film is then optionally modified to reduce its hydrophilicity.

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