Zener diode structure

Details Zener diode structure Zener diode structure

1985-05-31

1986-12-23

Edlow, Martin H.

357 20, 357 21, 357 48, H01L 2990

Patent

active

046315624

ABSTRACT:
A zener diode structure for integrated circuits is disclosed. The device includes a pair of parallel zener diodes connected back to back with a third zener diode. The anode of one of the parallel diodes is connected to the anodes of the other two diodes through a parasitic resistance. The zener breakdown junctions of two of the diodes are well below the surface of the device thereby reducing any adverse affect of stray surface charges and ultraviolet radiation. Further, the doping levels of the opposing diodes are selected to reduce drift in the breakdown voltage due to variations in operating temperature of the device.

REFERENCES:
patent: 3581164 (1971-05-01), Pfander et al.
patent: 3881179 (1975-04-01), Howard
patent: 4136349 (1979-01-01), Tsang
patent: 4213806 (1980-07-01), Tsang
patent: 4405933 (1983-09-01), Avery
patent: 4429324 (1984-01-01), Wilkens
patent: 4441114 (1984-04-01), Muggli
patent: 4484206 (1984-11-01), Moroshima et al.

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