Yield and speed enhancement of semiconductor integrated...

Details Yield and speed enhancement of semiconductor integrated... Yield and speed enhancement of semiconductor integrated...

2005-08-23

2005-08-23

Phan, Trong (Department: 2827)

Static information storage and retrieval

Read/write circuit

Signals

C365S201000, C716S030000

Reexamination Certificate

active

06934200

ABSTRACT:
A novel technique for the enhancement of yield and speed of semiconductor integrated circuits using post fabrication transistor mismatch compensation circuitry is provided. The system has a sense amplifier, a multiplexer, delay elements, and a provision for hardwiring fast and slow circuits during packaging of a memory circuit. The sense amplifier firing path is split into a slow and a fast path and the multiplexer can select either the slow path or fast path. The memory circuit is tested after fabrication to assess whether each memory cell can be identified as slow or fast circuits and accordingly the fast path or slow path is selected by the multiplexer. The path for each memory cell may be then hardwired during packaging by connecting a select input of multiplexer to a VDD signal or a ground signal.

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PCT Written Opinion corresponding to PCT/IN02/00039 mailed on Oct. 23, 2003.

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