X-Y Addressable memory

Static information storage and retrieval – Systems using particular element – Capacitors

Patent

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Details

365183, G11C 1124, G11C 1140

Patent

active

041986946

ABSTRACT:
Each memory cell of an x-y addressable semiconductor memory includes a charge storage element serially connected with an I-O (bit) line through a pair of CCD-type transfer gates. One gate is responsive to x-addressing and the other gate to y-addressing.
When an x-y address is selected only the charge storage element of the one selected memory cell communicates with the bit line.

REFERENCES:
patent: 3728695 (1973-04-01), Bentchkowsky
patent: 3851317 (1974-11-01), Kenyon
patent: 4086662 (1978-04-01), Itoh
patent: 4094008 (1978-06-01), Lockwood et al.

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