X Sense AMP memory

Details X Sense AMP memory X Sense AMP memory

1979-06-08

1980-11-11

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

307DIG3, 365149, G11C 700, G11C 706

Patent

active

042336759

ABSTRACT:
A semiconductor memory is comprised of a semiconductor substrate having first and second spaced apart arrays of memory cells disposed thereon. A plurality of first pairs of bit lines couple to the cells of the first array, and a corresponding plurality of second pairs of bit lines couple to the cells of the second array. Disposed between each first pair and corresponding second pair of bit lines is one X sense amplifier. This amplifier includes a set node selectively coupled to one bit line of the first pair and to one bit line of the second pair, and a reset node selectively coupled to the opposite bit lines of the first and second pair for selectively sensing charge on the four bit lines.

REFERENCES:
patent: 3838295 (1974-09-01), Lindell
patent: 4003034 (1977-01-01), Au
patent: 4050061 (1977-09-01), Kitagawa
Lee et al., Bit-Line Latch Gating Circuit for Field-Effect Trans. Memory, IBM Tech. Disc. Bul., vol. 17, No. 5, 10/74, pp. 1370-1371.
Lee, Cross-Coupled Latch for Memory Sensing, IBM Tech. Disc. Bul., vol. 17, No. 5, 10/74, pp. 1361-1362.

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