X-ray transmitting membrane for mask in x-ray lithography and me

Details X-ray transmitting membrane for mask in x-ray lithography and me X-ray transmitting membrane for mask in x-ray lithography and me

1992-03-26

1994-07-05

Loney, Donald J.

Stock material or miscellaneous articles

Composite

Of inorganic material

428 45, 428157, 428446, 428704, 430 5, 427160, 427250, 4272551, 4273722, 378 35, B32B 900, G03F 900

Patent

active

053266498

ABSTRACT:
Disclosed is an X-ray transmitting frame-supported membrane of silicon nitride suitable as a mask blank of an X-ray lithographic mask having outstandingly high resistance against irradiation with high-energy radiations and high transmission of light of a wavelength of 633 nm. These very desirable properties are obtained as a consequence of the extremely low content, i.e. 1.0 atomic % or less, of hydrogen in the silicon nitride, which can be achieved as a result of the specific preparation procedure by the CVD method in which the reactant gases are silane or disilane and ammonia in a specified mixing ratio to be reacted under a specified pressure and at a specified temperature.

REFERENCES:
patent: 5066533 (1991-11-01), America et al.

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