X-ray reduction exposure apparatus and device manufacturing meth

X-ray or gamma ray systems or devices – Specific application – Lithography

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378210, G21K 500

Patent

active

059955821

ABSTRACT:
A deflection mirror is disposed before an X-ray mask so as to reflect an X-ray beam and to project it to the X-ray mask. The X-ray mask is disposed opposed to a wafer with a distance D therebetween, and the X-ray beam reflected by the X-ray mask is projected onto the wafer through a reduction projection optical system. The deflecting mirror is disposed, in an example, at a position satisfying a relation D>L>d/(tan .delta.1+tan .delta.2) where L is the distance from the X-ray mask to an edge of the deflection mirror closer to the path of the X-ray beam reflected by the X-ray mask, d is the width of irradiation of the X-ray beam upon the X-ray mask, and .delta.1 and .delta.2 are incidence angles of the X-ray beam at upper and lower edges of the irradiation width d, respectively, upon the X-ray mask. This assures a compact structure wherein, even when a wafer of a large diameter is used, illumination light to the mask is not intercepted.

REFERENCES:
patent: 5131022 (1992-07-01), Terashima et al.
patent: 5153898 (1992-10-01), Suzuki et al.
patent: 5157700 (1992-10-01), Kurosawa et al.
patent: 5222112 (1993-06-01), Terasawa et al.

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