X-ray mask, method of manufacturing the same, and exposure metho

Details X-ray mask, method of manufacturing the same, and exposure metho X-ray mask, method of manufacturing the same, and exposure metho

1992-01-03

1992-11-24

Hannaher, Constantine

X-ray or gamma ray systems or devices

Specific application

Lithography

378 35, 430 5, G21K 500

Patent

active

051669625

ABSTRACT:
An X-ray mask includes an X-ray transmitting thin film consisting of SiC, a W X-ray absorber formed on one surface of the thin film and having a predetermined pattern, and a support frame arranged on a peripheral portion of the thin film. The thin film is constituted by a plurality of SiC layers having different C/Si composition ratios. When the thin film is formed by a CVD method, the flow rate of a gas containing Si is fixed while a gas containing C or a diluted gas mixture of the gas containing C is changed. Consequently, the visible light transmittance of the thin film is improved.

REFERENCES:
patent: 4873162 (1989-10-01), Yoshioka et al.
Appl. Phys. Lett., vol. 42, No. 5, Mar. 1, 1983, S. Nishino, et al., "Production of Large-Area Single-Crystal Wafers of Cubic SiC for Semiconductor Devices", pp. 460-462.

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