X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1992-06-18
1994-03-01
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 34, 430 5, G03C 500
Patent
active
052915360
ABSTRACT:
A method for forming an X-ray exposure mask having an X-ray permeable film with a high visible-light transmissivity. The method includes the steps of forming an aluminum oxide anti-reflective film on an x-ray permeable film, placing an x-ray absorber on the anti-reflective film and etching with the x-ray absorber to form x-ray pattern.
REFERENCES:
H. Luthje et al., "X-ray Lithography: Novel Fabrication Process for SiC/W Steppermasks", Nov. 1989, pp. 2343-2347, Japanese Journal of Applied Physics.
Proceeding of the Fifty-first Meeting of the Japan Society of Applied Physics p. 455, 26a-Y-7 (In the Japanese Language).
Itoh Masamitsu
Murooka Ken-ichi
Sugihara Shinji
Kabushiki Kaisha Toshiba
Porta David P.
Wong Don
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