X-ray mask alignment method and apparatus therefor as well as X-

X-ray or gamma ray systems or devices – Specific application – Lithography

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378 35, 378206, G21K 500

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active

053254147

ABSTRACT:
X-ray alignment method and apparatus therefor characterized by separately irradiating alignment light to alignment patterns of an X-ray mask and detecting reflected light therefrom, and directly irradiating alignment light to alignment patterns of a wafer and detecting the reflected light therefrom, and aligning the X-ray mask and the wafer in accordance with the detecting data of the reflected light. The apparatus includes a position alignment mechanism for the mask stage and the wafer stage, which moves the X-ray mask and/or the wafer and provides the alignment therebetween. The apparatus includes independent light sources for irradiating the alignment patterns of the X-ray mask side and the wafer side, independent detectors for detecting the reflected light of the alignment patterns of the X-ray mask and the wafer, and a controller for analyzing the respective positions of the X-ray mask and the wafer in accordance with the detection data and issuing control signals to the position alignment mechanism. The X-ray mask used in the alignment method and apparatus is transparent to only X-rays.

REFERENCES:
patent: 5182610 (1993-01-01), Shibata
Handling Explanation of Canon FPA 2000 i1 (in Japanese; English Translation also supplied) no date.

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