X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1991-11-01
1995-10-03
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 35, 378 36, G21K 500
Patent
active
054558506
ABSTRACT:
A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.
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Howells Malcolm R.
Jacobsen Chris
Martin Paul R.
Moss Kathleen S.
Porta David P.
Ross Pepi
The Regents of the Univerity of Calif.
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