X-ray lithography method for irradiating an object to form a pat

Details X-ray lithography method for irradiating an object to form a pat X-ray lithography method for irradiating an object to form a pat

1994-06-30

1996-04-16

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 35, G21K 500

Patent

active

055090419

ABSTRACT:
An x-ray lithography method for irradiating an object (14) to form a pattern thereon uses an x-ray mask (10) having a membrane (18). The membrane (18) has an open membrane surface (26), and x-ray radiation (16) is passed through the open membrane surface (26) to irradiate the object (14). During this irradiation, the open membrane surface (26) is substantially uniformly exposed to the x-ray radiation (16) so that stress-induced distortion of the membrane (18) is reduced.

REFERENCES:
patent: 4028547 (1974-06-01), Eisenberger
patent: 4803713 (1989-02-01), fujii
patent: 4881257 (1989-11-01), Nakagawa
patent: 5124561 (1992-06-01), Faure et al.
patent: 5224139 (1993-06-01), Korenaga et al.
patent: 5291536 (1994-03-01), Itoh et al.
Seese et al., "Accelerated Radiation Damage Testing of X-Ray Mask Membrane Materials", Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, David O. Patterson, editor, Proc. Society of Photo-Optical Instrumentation Engineers, vol. 1924, pp. 457-466 (1993).

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