X-ray lithography mask, light exposure apparatus and process the

Details X-ray lithography mask, light exposure apparatus and process the X-ray lithography mask, light exposure apparatus and process the

1994-03-01

1995-08-22

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 34, G21K 500

Patent

active

054447534

ABSTRACT:
Disclosed are an X-ray lithography mask, an exposure apparatus and an exposure process such as an X-ray lithography exposure apparatus and an X-ray lithography exposure process. An X-ray lithography mask includes an X-ray transmission membrane, a transfer pattern depicted on the X-ray transmission membrane and a frame for supporting the X-ray transmission membrane. The transfer pattern is depicted on the basis of a changing direction of a film thickness profile of the X-ray transmission membrane. In the exposure apparatus and process, a changing direction of an intensity profile of a radiation light illuminated on an exposure area of a mask is coincident with a changing direction of a film thickness profile of a light transmission membrane on the mask and an illumination time of the radiation light for the exposure area is changed on the basis of the intensity profile of the radiation light and the thickness profile of the light transmission membrane so that the intensity of a transfer patter image formed by the transmission of the radiation light through the light transmission membrane is rendered uniform.

REFERENCES:
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patent: 5005075 (1991-04-01), Kobayashi et al.
patent: 5012500 (1991-04-01), Watanabe et al.
patent: 5052033 (1991-09-01), Ikeda et al.
patent: 5157700 (1992-10-01), Kurosawa
Patent Abstracts of Japan, Kokai No. 62-145625, vol. 11, No. 376, Jun. 1987.
Patent Abstracts of Japan, Kokai No. 63-009931, vol. 12, No. 25, Jan. 1988.
Patent Abstracts of Japan, Kokai No. 02-234498, vol. 14, No. 550, Sep. 1990.

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