X-ray lithography carbon mask and method of manufacturing the sa

Details X-ray lithography carbon mask and method of manufacturing the sa X-ray lithography carbon mask and method of manufacturing the sa

1989-06-23

1991-03-05

Howell, Janice A.

X-ray or gamma ray systems or devices

Specific application

Lithography

430 5, 430299, 430297, 378 34, G21K 500, G03F 900, G03C 518, G03C 500

Patent

active

049982672

ABSTRACT:
Unwanted distortion of the planar configuration of a carbon-based X-ray lithography mask, that would otherwise occur during selective etching of the (silicon) support substrate, is prevented by incorporating a compensation layer of inorganic material that effectively offsets the internal compressive stress characteristic of the carbon. For this purpose, on a top, planar surface of a silicon substrate, a multiple layer structure containing a first layer of carbon having an internal compressive stress characteristic and a second layer of inorganic material having an internal tensile stress characteristic, is plasma-deposited. The tensile stress characteristic of the inorganic layer compensates for the compressive stress characteristic of the carbon layer and causes the composite structure to retain its substantially planar configuration after the underlying silicon substrate has been etched in the course of obtaining a rim structure on which the X-ray transmissive structure is supported. An X-ray absorption layer is then selectively formed on the composite structure. Preferably, the laminate structure has multiple alternating layers of carbon and inorganic material. The thickness of a carbon layer is on the order of 1000-3000 angstrom, the thickness of a tensile stress layer is on the order of 500-2000 anstroms, and the overall thickness of said laminate structure is on the order of 10000-30000 angstroms.

REFERENCES:
patent: 4604292 (1986-08-01), Evans et al.
patent: 4608526 (1986-08-01), Neukermans et al.

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