X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1979-11-09
1982-08-03
Smith, Alfred E.
X-ray or gamma ray systems or devices
Specific application
Lithography
430967, B05D 306
Patent
active
043429173
ABSTRACT:
In order to obtain shorter exposure time and to obtain a longer life in x-ray lithography apparatus, an x-ray target made of tungsten is utilized and the apparatus operated to generate the tungsten M-line, this line being at a wavelength which will be absorbed by the resist normally used in lithography. To develop the resist, which was initially designed for use in an electron beam lithography, a developing method is used in which a initial short development with a high concentration is first carried out followed by a longer, full development with a concentration which is approximately the lowest at which complete development will take place.
REFERENCES:
patent: 3742229 (1973-06-01), Smith et al.
patent: 3742230 (1973-06-01), Spears et al.
patent: 3743842 (1973-07-01), Smith et al.
patent: 4035522 (1977-07-01), Hatzakis et al.
patent: 4061829 (1977-12-01), Taylor
patent: 4215192 (1980-07-01), Buckley
Spears et al., "High Resolution Pattern Replication Using Soft X-rays", 8 Electronics Letters 102, Feb. '72.
Spears et al., "X-ray Lithography--A New High _Resolution Replication Process", Solid State Tech., 21 (Jul. '72).
Poyner, "The Design and Development of a Ring Cathode Electron Gun as an Evaporation Source", 26 Vacuum 471, Oct.-Nov. '76.
McCoy et al., "Precision Mask Alignment for X-ray Lithography, "Preprint, (distributed in May '76).
Wardly et al., "Application des Rayons X en Microlithographie", Proc. Int. Conf. on Microlithography, Microelectronics, and Optics, Paris, Jun. 21, 1977 to Jun. 24, 1977, (Internal IBM publication, Apr. 29, 1977).
Feder et al., "IBM Technical Disclosure Bulletin", vol. 18, No. 7, Dec. 1975, pp. 2343-2345.
Fredericks et al., "IBM Technical Disclosure Bulletin", vol. 19, No. 11, Apr. 1977, pp. 4193.
Handbook of Chemistry and Physics, 1976, 57th Ed., CRC Press Inc., Cleveland Ohio, pp. E175-E180.
McCoy, "X-ray Lithography for Integrated Circuits-A Review", SPIE, vol. 100, Semiconductor Microlithography, II, (1977, pp. 162 et seq.
Bernacki et al., "Fabrication of Silicon, MOS Devices Using X-Ray Lithography", IEEE Trans. on E.D., V. Ed-22, No. 7, Jul. '75.
Maydan et al., "High Speed Replication of Submicron Features on Large Areas by X-ray Lithography", IEEE Transactions on Electron Devices, vol. ED-22, No. 7, Jul. '75.
Buckley, "Factors which Determine the Exposure Time in an X-ray Lithography Exposure System", reprinted from "Electron and Ion Beam Science and Technology, Seventh International Conf., 1976 by Electrochem. Soc.
Stranathan, "Particles of Modern Physics", McGraw Hill, 1942, pp. 288, 289, 290-293, 296-301.
Giarratana S. A.
Grigsby T. N.
Grimes E. T.
Murphy T. P.
Smith Alfred E.
LandOfFree
X-ray lithography apparatus and method of use does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with X-ray lithography apparatus and method of use, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and X-ray lithography apparatus and method of use will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1469506