X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1992-03-09
1993-09-28
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 84, 378147, 2504921, G03B 700, G01M 1100
Patent
active
052492150
ABSTRACT:
X-ray exposure equipment which can effectively converge a synchrotron radiation, which tends to diverge to a great extent in a horizontal direction, to assure a sufficiently high intensity on a lithographic plane and can irradiate X-rays perpendicularly to a full lateral extent of the lithographic plane over an entire exposure area. The X-ray exposure equipment comprises a point X-ray source and a first reflecting mirror having first and second point focuses and disposed such that the first focal point coincides with the location of the X-ray source so as to focus X-rays to the second focal point. A second reflecting mirror is disposed such that the focus thereof substantially coincides with the second focal point of the first reflecting mirror so as to collimate X-rays received from the first reflecting mirror by way of the focusing property thereof in parallel to a principal optical axis of an optical system for X-rays which includes the first and second reflecting mirrors. The parallel X-rays from the second reflecting mirror are irradiated perpendicularly to a lithographic plane.
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H. Betz, High Resolution Lithography Using Synchrotron Radiation, Nuclear Instruments and Methods in Physics Research, A246, (1986), pp. 658-667, North-Holland.
Chu Kim-Kwok
Mitsubishi Denki & Kabushiki Kaisha
Porta David P.
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