X-ray exposure method and semiconductor device manufactured...

Details X-ray exposure method and semiconductor device manufactured... X-ray exposure method and semiconductor device manufactured...

2005-05-31

2005-05-31

Glick, Edward J. (Department: 2882)

X-ray or gamma ray systems or devices

Specific application

Lithography

C378S035000

Reexamination Certificate

active

06901133

ABSTRACT:
The pattern dimensions of an X-ray absorber are made approximately 1.5 times (approximately 75 nm) a pattern half pitch (L/2=50 nm). Thereby, a high quality optical image can be obtained since the contrast in regard to X-rays of wavelengths shorter than approximately 8 Å to 9 Å is improved vis-à-vis the contrast of a 50 nm line and space periodic mask pattern. As a result, an X-ray exposure method produces a high resolution, and a semiconductor device manufactured by this X-ray exposure method as well as an X-ray mask, X-ray exposure unit and resist material.

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Vladimirsky, Olga et al.; “Sub-100 nm Imaging in X-ray Lithography”, part of the SPIE Conference on Emerging Lithographic Technologies III, Proceedings of SPIE, vol. 3676, pp. 478-484, (Mar. 1999).
Fujii, K. et al.; “Low-dose exposure technique for . . . x-ray lithography”, Journal of Science & Technology B, vol. 16, No. 6, pp. 3504-3508, (Nov./Dec. 1998).
Watanabe, Hiroshi et al.; “Microprocesses and Nanotechnology”, 2001 Intl. Microprocesses and Nanotechnology Conf., Oct. 31-Nov. 2, 2001, Japan.

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