X-ray exposure method

Details X-ray exposure method X-ray exposure method

2005-07-26

2005-07-26

Church, Craig E. (Department: 2882)

X-ray or gamma ray systems or devices

Specific application

Lithography

Reexamination Certificate

active

06922458

ABSTRACT:
A resist is on a substrate with a lower layer film between the resist and the substrate. The lower layer film includes chemical elements and the element absorbing the largest amount of x-rays is carbon. The thickness of the lower layer film is determined by considering the influences of secondary electrons from the substrate and the carbon of the lower layer film. The resist includes chlorine, or a similar element, having a specific absorption edge. Under such conditions, the average wavelength of x-rays absorbed in the resist is in a prescribed range. In this way, in x-ray exposure, blur caused by secondary electrons is suppressed using a wavelength region of relatively shorter wavelengths.

REFERENCES:
patent: 2002/0196896 (2002-12-01), Kitayama et al.
patent: 2003/0099324 (2003-05-01), Itoga et al.
patent: 2003/0152190 (2003-08-01), Watanabe et al.
T. Takigawa, “The Innovation of ULSI Lithography”Science Forum Co. Ltd., 1995,pp. 222, 1stedition. Unable to evaluate foreign language.
Kise et al., “Suppression of Secodary Electron Blur By Using Br-Containing Resists In X-Ray Lithography”,Journal of Vacuum Science&Tech. B., The Society Through the American Institute of Physics, 2002, pp. 2953-2957, 20(6.).
K. Itoga et al., “Effect of Secondary Electron from the Substrate In X-Ray Lithography Using Harder Radiation Spectra”,Journal of Vacuum Science&Tech. B., The Society Through the American Institute of Physics, 2001,pp. 2439-2443, 19(6).

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