X-ray exposure mask and fabrication method thereof

Details X-ray exposure mask and fabrication method thereof X-ray exposure mask and fabrication method thereof

1993-11-01

1995-05-09

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Lithography

378210, G21K 500

Patent

active

054147468

ABSTRACT:
An X-ray exposure mask comprises an X-ray transmission layer and an X-ray absorption layer formed on the X-ray transmission layer and being patterned. The X-ray absorption layer has a first region having a first thickness and a second region having a second thickness less than the first thickness.

REFERENCES:
patent: 4035522 (1977-07-01), Hatzakis
patent: 4816361 (1989-03-01), Glendinning
patent: 4890309 (1989-12-01), Smith et al.
High-resolution x-ray lithography using a phase mask, Yoshiki Yamakoshi, et al., Applied Optics, vol. 25, No. 6, Mar. 15, 1986.
Influence of Phase Shift on Pattern Transfer in X-Ray Lithography, M. Weiss, et al., Microelectronic Engineering 6, (1987), 265-271, North-Holland.
Use of pi-phase shifting x-ray mask to increase the intensity slope at feature edges, Y.-C. Ku, et al., Massachusetts Institute of Technology.
Improving resolution in Photolithography with a Phase-Shifting Mask, Marc D. Levenson, et al.
The Phase-Shifting Mask II: Imaging Simulations and Submicrometer Resist Exposure, Marc D. Levenson, et al.
Optical Imaging with Phase Shift Masks, Mark D. Prouty, et al., University of California.
Mask Contrast Enhancement Using Beveled Edge in X-Ray Lithography, Shinya Hasegawa, et al., SORTEC Corporation, Ibaraki, Japan.

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