X-ray exposure apparatus, X-ray exposure method, X-ray mask,...

Details X-ray exposure apparatus, X-ray exposure method, X-ray mask,... X-ray exposure apparatus, X-ray exposure method, X-ray mask,...

2005-09-20

2005-09-20

Glick, Edward J. (Department: 2882)

X-ray or gamma ray systems or devices

Specific application

Lithography

C378S085000

Reexamination Certificate

active

06947518

ABSTRACT:
An X-ray exposure apparatus comprises an X-ray mirror containing a material having an absorption edge only in at least either one of a wavelength region of less than 0.45 nm and a wavelength region exceeding 0.7 nm as to X-rays.

REFERENCES:
patent: 4110625 (1978-08-01), Cairns et al.
patent: 4634643 (1987-01-01), Suzuki
patent: 5214685 (1993-05-01), Howells
patent: 5258091 (1993-11-01), Imai et al.
patent: 5356662 (1994-10-01), Early et al.
patent: 5374974 (1994-12-01), Rostoker et al.
patent: 5503958 (1996-04-01), Waldo
patent: 5524131 (1996-06-01), Uzawa et al.
patent: 5528364 (1996-06-01), Koike
patent: 5622525 (1997-04-01), Haisma et al.
patent: 5677939 (1997-10-01), Oshino
patent: 5770335 (1998-06-01), Miyake et al.
patent: 5923719 (1999-07-01), Watanabe
patent: 5931723 (1999-08-01), Katsuoka et al.
patent: 5949844 (1999-09-01), Watanabe
patent: 6049588 (2000-04-01), Cash, Jr.
patent: 6101237 (2000-08-01), Miyachi et al.
patent: 6167111 (2000-12-01), Watanabe et al.
patent: 6219400 (2001-04-01), Hasegawa et al.
patent: 6251567 (2001-06-01), Reinecke et al.
patent: 6256371 (2001-07-01), Hasegawa et al.
patent: 2002/0048341 (2002-04-01), Itoga et al.
patent: 2002/0196896 (2002-12-01), Kitayama et al.
patent: 2003/0152190 (2003-08-01), Watanabe et al.
patent: 0 597 664 (1994-05-01), None
patent: 0 903 638 (1999-03-01), None
patent: 903638 (1999-03-01), None
patent: 2054195 (1981-02-01), None
patent: 55-71311 (1980-05-01), None
patent: 3-120714 (1991-05-01), None
patent: 06-194497 (1994-07-01), None
patent: 6-194497 (1994-07-01), None
patent: 8-152499 (1996-06-01), None
patent: 9-218299 (1997-08-01), None
patent: 10-083955 (1998-03-01), None
patent: 10-172883 (1998-06-01), None
patent: 10289867 (1998-10-01), None
patent: 11-14800 (1999-01-01), None
patent: 11003858 (1999-01-01), None
patent: 11-014800 (1999-01-01), None
patent: 11026350 (1999-01-01), None
patent: 11038193 (1999-02-01), None
patent: 11-084098 (1999-03-01), None
patent: 11-160871 (1999-06-01), None
patent: 1999-29914 (1999-04-01), None
Bearden et al., Reviews in Modern Physics [1967], v. 39, from http://www-structure.lln.gov/Xray/elements.html.
“Theoretical calculations of a square multilayer Bragg-Fresnel lens by quantum theory” Zichun Le, et al.Optics and Laser Technology, Oct. 1999, Elsevier, UK, vol. 31, No. 7, pp. 497-503, XP002178984.
“Modeling X-ray proximity lithography”, Jerry Z. Y. Guo et al., Journal of Research and Development, vol. 37, No. 3, May 1993, pp. 331-349.
“Updated system model for x-ray lithography”, M. Khan et al., J. Vac. Sci. Technol. B 12(6), Nov./Dec. 1994, pp. 3930-3935.
“50-nm x-ray lithography using synchrotron radiation”, Y. Chen et al., J. Vac. Sci. Technol. B 12(6), Nov./Dec. 1994, pp. 3959-3964.
NTT R&D vol. 43, No. 6, p. 501 (1994).
“Laser Generated X-Ray Source for Time-Resolved Biological and Material Structure Studies”, Bartunik et al., Structural Biological Applications of X-Ray Absorption, Scattering, and Diffraction, pp. 331-348, 1996.
“X-Ray nanolithography-the clearest path to 0.1 and sub-0.1μm ULSI”, M.L. Schattengurg et al , JJAP Series 5, Proc. of 1991 Intern. MicroProcess Conference, pp. 63-70.
“Progress of SR lithography-A path to 0.1 micron feature size-”, Nobufumi Atoda, International Conference on Advanced Microelectronic Devices and Processing, pp. 103-108, Mar. 3-5, 1994.
“Extendibility of synchrotron radiation lithography to the sub-100-nm region”, Kimiyoshi Deguchi, Bulletin of Solid State Physics and Applications, vol. 5, No. 2, May 25, 1999, pp. 59-64. (Partial English translation).
“Innovation in ULSI lithography”, Tadahiro Takigawa, Naoaki Aizaki, Shinji Okazaki and Hiroaki Morimoto, Science Forum, Nov. 10, 1994, pp220-227. (Partial English translation).
“Lithography: Exposure system and resist process technology”, Shinji Okazaki, Journal of Applied Physics, vol. 69, No. 2, (2000) pp. 196-200.
“Updated system model for x-ray lithography”, M. Khan, L. Mohammad, J. Xiao, L. Ocola, and F. Cerrina, J. Vac. Sci. Technol. B 12(6), Nov./Dec. 1994, pp. 3930-3935.
“Sub-Half-Micron Lithography for ULSIs”, Katsumi Suzuki, Shinji Matsui and Yukinori Ochiai, Cambridge University Press 2000, pp. 66-69.
“Performance of a wide-flux delivery system for synchrotron x ray lithography”, J. P. Silverman, C. N. Archie, J. M. Oberschmidt, and R. P. Rippstein, J. Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp2976-2980.
“Simultaneous optimization of spectrum, spatial coherence, gap, feature bias, and absorber thickness in synchrotron-based x-ray lithography”, Scott D. Hector, Henry I. Smith and M. L. Schttenburg, J. Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp2981-2985.
“X ray lithography for <100 nm ground rules in complex patterns”, Scott Hector, Victor Pol and Raman Viswanathan et al., J. Vac. Sci. Technol. B 15(6), Nov./Dec. 1997, pp2517-2521.
“Mirror design and alignment for x ray lithography beamlines”, Kenichi Kuroda and Takashi Kaneko, Jpn. J. Appl. Phys. vol. 34 (1995), pp. 6764-6769.
“High efficiency beamline for synchrotron radiation lithography”, Takashi Kaneko, Yasunao Saitoh, Seiichi Itabashi, and Hideo Yoshihara, J. Vac. Sci. Technol. B 9(6), Nov./Dec. 1991, pp3214-3217.
“Fabrication of 0.2um large scale integrated circuits using synchrotron radiation x-ray lithography”, K. Deguchi, K. Miyoshi, H. Ban, T. Matsuda, T. Ohno, and Y. Kado, J. Vac. Sci. Technol. B 13(6), Nov./Dec. 1995, pp3040-3045.
“Replication of near 0.1 μm hole patterns by using x-ray lithography”, Yukiko Kikuchi, Naoko Kihara, Shinji Sugihara, and Satoshi Satoh, et al., J. Vac. Sci. Technol. B 14(6), Nov./Dec. 1996, pp4298-4302.
“Overlay and Critical Dimension Control in Proximity X ray Lithography”, Kiyoshi Fuji, Yuusuke Tanaka, Katsumi Suzuki, Toshiyuki Iwamoto, Shinji Tsuboi and Yasuji Matsui, NEC Research & Development vol. 42, No. 1, pp. 27-31, Jan. 2001.
“Control of X-Ray Beam Fluctuation in Synchrotron Radiation Lithography Beamline”, Hiroki Shimano, Hirofumi Tanaka, Yoshihiko Ozaki, and Kenji Marumoto, Jpn, J. Appl. Phys. vol. 34 (1995) pp. 5856-5861.
“Novel illumination system of synchrotron radiation stepper with full field exposure method”, Yutaka Watanabe, Shinichi Hara, Nobutoshi Mizusawa, Yasuaki Fukuda and Shunichi Uzawa, J. Vac. Sci. Technolo. B 15(6), Nov./Dec. (1997), pp. 2503-2508.
“Evaluation of new x-ray stepper, the XRA”, Hiroaki Sumitani, Muneyoshi Suita, Soichiro Mitsui, Hajime Aoyama, Kiyoshi Fujii, Hiroshi Watanabe, Takao Taguchi, and Yasuji Matsui, J. Vac. Sci. Technol. B19(6), Nov./Dec. (2001), pp. 2448-2454.
Parametric modeling at resist-substrate interfaces, L. E. Ocola and F. Cerrina, J. Vac. Sci. Technol. B 12(6), Nov./Dec. 1994, pp. 3986-3989.
“The effects of secondary electron from a silicon substrate on SR x-ray lithography”, Taro Ogawa, Kozo Mochiji, Yasunari Soda and Takeshi Kimura, Japanese Journal of Applied Physics, vol. 28, No. 10, Oct., 1989, pp. 2070-2073.
“Sub-20 nm x-ray nanolithography using conventional mask technologies on monochromatized synchrotron radiation”, G. Simon, A. M. Haghiri-Gosnet, J. Bourneix, D. Decanini, Y. Chen, F. Rousseaux, H. Launois, and B. Vidal, J. Vac. Sci. Technol. B15(6), Nov./Dec. 1997, pp. 2489-2494.
“The first x ray lithography beamline at Hefei National Synchrotron Radiation Laboratory”, Shinan Qian et. al., J. Vac. Sci. Technol. B 8(6), Nov./Dec. 1990, pp. 1524-1528.
“Resolution limits in x ray lithography”, M. Feldman and J. Sun, J. Vac. Sci. Technol. B 10(6), Nov./Dec. 1992, pp. 3173-3176.
“Synchrotron radiation beamline for x ray lithography”, Shunji Goto, Takao Taguchi, Toshihiko Osada, Shigeru Okamura, and Tokushige Hisatsugu, J. Vac. Sci. Technol. B 11(2), Mar./Apr. 1993, pp. 286-295.
“Extend

Affiliated with

Also associated with

Rating

X-ray exposure apparatus, X-ray exposure method, X-ray mask,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with X-ray exposure apparatus, X-ray exposure method, X-ray mask,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and X-ray exposure apparatus, X-ray exposure method, X-ray mask,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3444105