X-ray exposure apparatus and method, semiconductor...

Details X-ray exposure apparatus and method, semiconductor... X-ray exposure apparatus and method, semiconductor...

2005-09-20

2005-09-20

Glick, Edward J. (Department: 2882)

X-ray or gamma ray systems or devices

Specific application

Lithography

C378S035000, C378S084000, C378S156000

Reexamination Certificate

active

06947519

ABSTRACT:
An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.

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