X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1993-03-01
1993-11-30
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 35, 2504922, G21K 500
Patent
active
052672921
ABSTRACT:
An X-ray exposure apparatus for exposing a semiconductor wafer to a mask with X-rays, to print a pattern of the mask onto the wafer, is disclosed. The ambience within a stage accommodating chamber, accommodating a mask, a semiconductor wafer, and the like, is replaced by helium. Thereafter, a predetermined quantity of helium is supplied into the stage accommodating chamber. This effectively prevents degradation of the purity of helium due to air leakage into the chamber. Therefore, any undesirable decrease in the quantity of X-ray transmission can be avoided. Thus, high-precision and high-throughput exposure is ensured.
REFERENCES:
patent: 4185202 (1980-01-01), Dean et al.
patent: 4516254 (1985-05-01), Komeyama et al.
patent: 4748646 (1988-05-01), Osada et al.
patent: 4825453 (1989-04-01), Kembo et al.
Amemiya Mitsuaki
Kariya Takao
Mizusawa Nobutoshi
Shimoda Isamu
Tanaka Yutaka
Canon Kabushiki Kaisha
Porta David P.
Wong Don
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