X-ray exposure apparatus

X-ray or gamma ray systems or devices – Specific application – Lithography

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378 35, G21K 500

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active

051724030

ABSTRACT:
An X-ray exposure apparatus for transferring a pattern of a mask to a wafer includes an X-ray source accommodating chamber; a mask chuck for supporting the mask; a wafer chuck for supporting the wafer; a stage for moving the wafer chuck; a stage accommodating chamber for accommodating therein the mask chuck, the wafer chuck and the stage; a barrel for coupling the X-ray source accommodating chamber with the stage accommodating chamber, to define an X-ray projection passageway; a blocking window provided in the X-ray projection passageway, for isolating the ambience in the X-ray accommodating chamber and the ambience in the stage accommodating chamber from each other; and a gas supply port contributable to fill the stage accommodating chamber with a gas ambience of low X-ray absorption, the gas supply port opening to the X-ray projection passageway, at a position between the blocking window and the mask supported by the mask chuck.

REFERENCES:
patent: 4185202 (1980-01-01), Dean et al.
patent: 4403336 (1983-09-01), Taniguchi et al.
patent: 4635282 (1987-01-01), Okada et al.
patent: 4648106 (1987-03-01), Novak
Patent Abstracts of Japan, Kokai No. 59-126632, vol. 8, No. 250, Nov. 1984.
Betz, "High Resolution Lithography Using Synchrotron Radiation," Nuclear Instruments & Methods in Physics Research, Section, A, vol. A 246, vol. 1/3, May 1986, pp. 658 through 667.

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