Writing to ferroelectric memory devices

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S185180, C365S185240, C365S185260, C365S185280

Reexamination Certificate

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11130598

ABSTRACT:
A ground potential is applied to a first word line coupled to a control gate of a selected ferroelectric memory cell in an array of ferroelectric memory cells. A fraction of a programming voltage is applied to other word lines coupled to control gates of non-selected memory cells not associated with the first word line. The programming voltage is applied to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell. A fraction of the programming voltage is applied to other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line and to other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line.

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