Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-08-30
2005-08-30
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S185180, C365S185240, C365S185260, C365S185280
Reexamination Certificate
active
06937501
ABSTRACT:
A programming voltage is applied to a first word line coupled to a control gate of a selected ferroelectric memory cell in an array of ferroelectric memory cells. A gate/source voltage equal to the programming voltage is sufficient to reverse polarity of each memory cell. A ground potential is applied to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell. A fraction of the programming voltage is applied to other word lines coupled to control gates of non-selected memory cells not associated with the first word line, other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line, and other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line.
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Leffert Jay & Polglaze PA
Micro)n Technology, Inc.
Nguyen Viet Q.
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