Writing to asymmetric memory

Details Writing to asymmetric memory Writing to asymmetric memory

2011-04-19

2011-04-19

Elmore, Reba I (Department: 2189)

Electrical computers and digital processing systems: memory

Address formation

Address mapping

C711S101000, C711S103000, C711S146000, C711S170000

Reexamination Certificate

active

07930513

ABSTRACT:
A memory controller writes to a virtual address associated with data residing within an asymmetric memory component of main memory that is within a computer system and that has a symmetric memory component, while preserving proximate other data residing within the asymmetric memory component. The symmetric memory component within the main memory of the computer system is configured to enable random access write operations in which an address within a block of the symmetric memory component is written without affecting the availability of other addresses within the block of the symmetric memory component during the writing of that address. The asymmetric memory component is configured to enable block write operations in which writing to an address within a region of the asymmetric memory component affects the availability of other addresses within the region of the asymmetric memory component during the block write operations involving the address.

REFERENCES:
patent: 4757533 (1988-07-01), Allen et al.
patent: 5012408 (1991-04-01), Conroy
patent: 5404485 (1995-04-01), Ban
patent: 6393545 (2002-05-01), Long et al.
patent: 6549959 (2003-04-01), Yates et al.
patent: 6564326 (2003-05-01), Helbig
patent: 6970968 (2005-11-01), Holman
patent: 2002/0051350 (2002-05-01), Take
patent: 2002/0118593 (2002-08-01), Takemae
patent: 2002/0133684 (2002-09-01), Anderson
patent: 2002/0138600 (2002-09-01), Singhal
patent: 2003/0137862 (2003-07-01), Brunelle et al.
patent: 2003/0188083 (2003-10-01), Kumar et al.
patent: 2004/0117581 (2004-06-01), Lee
patent: 2004/0160835 (2004-08-01), Altman et al.
patent: 2004/0186948 (2004-09-01), Lofgren et al.
patent: 2004/0193783 (2004-09-01), Sharma et al.
patent: 2005/0044303 (2005-02-01), Perego et al.
patent: 2005/0166026 (2005-07-01), Ware et al.
patent: 2005/0235131 (2005-10-01), Ware
patent: 2005/0240745 (2005-10-01), Iyer et al.
patent: 2005/0251617 (2005-11-01), Sinclair et al.
patent: 2005/0273570 (2005-12-01), DeSouter et al.
patent: 2005/0289317 (2005-12-01), Liou et al.
patent: 2006/0106984 (2006-05-01), Bartley et al.
patent: 2006/0149857 (2006-07-01), Holman
patent: 2006/0230250 (2006-10-01), Klint et al.
patent: 2007/0300038 (2007-12-01), Ware
Lee, H.G., and Chang, N., “Energy-Aware Memory Allocation in Heterogeneous Non-Volatile Memory Systems,”Low Power Electronics and Design, Aug. 2003, retrieved from http://ieeexplore.ieee.org/iel5/8720/27594/01231941.pdf?tp=&isnumber=&arnumber=12394>on May 1, 2008.
Tseng, H.W., et al., “An Energy-Efficient Virtual Memory System with Flash Memory as the Secondary Storage,”Low Power Electronics and Design, Oct. 4-6, 2006, retrieved from http://ieeexplore.ieee.org/xpls/abs13all.jsp?arnumber=4271879>on May 1, 2008.
International Search Report and Written Opinion for International Application No. PCT/US07/83669, dated Apr. 30, 2008, 9 pages.
International Search Report and Written Opinion for International Application No. PCT/US07/83671, dated May 22, 2008, 14 pages.
International Search Report and Written Opinion for International Application No. PCT/US07/83668, dated May 15, 2008, 8 pages.
International Search Report and Written Opinion for International Application No. PCT/US07/83666, dated Apr. 21, 2008, 9 pages.
International Search Report and Written Opinion for International Application No. PCT/US07/79622, dated Apr. 9, 2008, 12 pages.
Office Action for U.S. Appl. No. 11/864,763, mailed Jun. 16, 2008, 11 pages.
International Search Report and Written Opinion for International Application No. PCT/US07/80015, dated Aug. 13, 2008, 13 pages.

Affiliated with

Also associated with

Rating

Writing to asymmetric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Writing to asymmetric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Writing to asymmetric memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2661824