Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-03-06
2009-02-24
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492100, C250S492300, C250S306000, C250S307000
Reexamination Certificate
active
07495243
ABSTRACT:
A charged particle beam writing method includes inputting design pattern data, virtually dividing a writing area to be written with the design pattern data into a plurality of small areas in a mesh-like manner, calculating a pattern density in each of the plurality of small areas based on the design pattern data, calculating a resizing amount for each pattern density in a case of irradiating a charged particle beam at an isofocal dose, resizing a dimension of the design pattern data in each of the plurality of small areas, based on the resizing amount in each of the plurality of small areas, and writing a resized design pattern on a target workpiece with the isofocal dose corresponding to the pattern density which was calculated before the resizing in each of the plurality of small areas.
REFERENCES:
patent: 6831283 (2004-12-01), Yoda et al.
patent: 7109483 (2006-09-01), Nakasuji et al.
patent: 2003/0146397 (2003-08-01), Yoda et al.
patent: 2008/0182185 (2008-07-01), Abe et al.
patent: 2008/0265174 (2008-10-01), Hiramoto et al.
patent: 11-204415 (1999-07-01), None
patent: 2000-75467 (2000-03-01), None
patent: 2003-318077 (2003-11-01), None
patent: 2005-195787 (2005-07-01), None
patent: 1998-070537 (1998-10-01), None
NuFlare Technology, Inc.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wells Nikita
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