Writing method of charged particle beam, support apparatus...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492200, C250S492100, C250S492300, C250S306000, C250S307000

Reexamination Certificate

active

07495243

ABSTRACT:
A charged particle beam writing method includes inputting design pattern data, virtually dividing a writing area to be written with the design pattern data into a plurality of small areas in a mesh-like manner, calculating a pattern density in each of the plurality of small areas based on the design pattern data, calculating a resizing amount for each pattern density in a case of irradiating a charged particle beam at an isofocal dose, resizing a dimension of the design pattern data in each of the plurality of small areas, based on the resizing amount in each of the plurality of small areas, and writing a resized design pattern on a target workpiece with the isofocal dose corresponding to the pattern density which was calculated before the resizing in each of the plurality of small areas.

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patent: 2008/0182185 (2008-07-01), Abe et al.
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patent: 2005-195787 (2005-07-01), None
patent: 1998-070537 (1998-10-01), None

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