Writing memory cells exhibiting threshold switch behavior

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S189160, C365S207000

Reexamination Certificate

active

08031516

ABSTRACT:
A memory cell exhibiting threshold switch behavior, such as a phase change memory, can be programmed in a way that eliminates the need for a separate post-programming verification cycle. In particular, a circuit can be used to apply the programming pulse to a cell in a way that determines whether the cell has reached the desired threshold voltage. If the cell has not reached the desired threshold voltage, it receives another programming pulse. If it has, it does not receive another programming pulse. Thus, by applying a voltage across the cell that never exceeds the threshold voltage of the cell, the need for a separate verification cycle can be eliminated in some embodiments.

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patent: 6768665 (2004-07-01), Parkinson et al.
patent: 6859390 (2005-02-01), Pashmakov
patent: 7050328 (2006-05-01), Khouri et al.
patent: 7324371 (2008-01-01), Khouri et al.
patent: 2006/0181931 (2006-08-01), Ha et al.
patent: 2007/0115749 (2007-05-01), Gilbert
patent: 2009/0103365 (2009-04-01), Roohparvar et al.

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