Writing error diagnosis method for charged particle beam...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492100, C250S3960ML, C250S400000, C250S398000, C250S492220, C250S492230, C250S491100, C382S147000, C382S149000, C356S235000, C714S005110, C714S042000

Reexamination Certificate

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07598504

ABSTRACT:
A writing error diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which can specify an error cause within a short period of time in occurrence of a pattern writing error are provided. The writing error diagnosis method for a charged beam photolithography apparatus is a writing error diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target object to write a desired pattern. Processing result data of a pattern writing circuit at a position where a pattern writing error occurs is collected after the pattern writing error occurs, and the collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the diagnosis method.

REFERENCES:
patent: 7475279 (2009-01-01), Takahashi et al.
patent: 10-284392 (1998-10-01), None

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