Writing control circuit employed in non-volatile semiconductor m

Details Writing control circuit employed in non-volatile semiconductor m Writing control circuit employed in non-volatile semiconductor m

1992-07-24

1993-10-12

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

36518906, 36518907, 36518909, G11C 700, G11C 1606

Patent

active

052532011

ABSTRACT:
A write control circuit is provided for supplying a gate of an n-channel enhancement-type writing transistor with a voltage corresponding to data when the data is written. The circuit comprises a reference potential-generation circuit, a differential amplifier, and a feedback circuit. The reference potential-generation circuit generates a reference potential substantially equal to the upper limit of that high level of each of the bit lines which is assumed at the time of writing. The differential amplifier has an input terminal to be supplied with the reference potential. A write voltage serving as an operation voltage is applied to the amplifier. The feedback circuit is connected between the other input terminal and output terminal of the differential amplifier. The feedback circuit generates, under the control of the differential amplifier, a write control voltage higher than the reference potential by the threshold voltage of the writing transistor, and applies the write control voltage to the gate of the writing transistor. Also, the feedback circuit feeds a voltage obtained by reducing the write control voltage, back to the other input terminal of the differential amplifier.

REFERENCES:
patent: 5016218 (1991-05-01), Yamazaki et al.
patent: 5025417 (1991-06-01), Miyamoto et al.
patent: 5173874 (1992-12-01), Kobatake

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