Write verify method for resistive random access memory

Details Write verify method for resistive random access memory Write verify method for resistive random access memory

2010-10-07

2011-11-15

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S145000, C365S151000, C365S163000

Reexamination Certificate

active

08059450

ABSTRACT:
Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state. Then the method includes applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value. This step is repeated until the high resistance state resistance value is greater than the lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value. The reverse resetting voltage pulse has a second polarity being opposite the first polarity. This step is repeated until all the high resistance state resistance value is less than the upper resistance limit value.

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