Write verify method for resistive random access memory

Details Write verify method for resistive random access memory Write verify method for resistive random access memory

2008-05-20

2010-11-02

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S145000, C365S151000, C365S163000

Reexamination Certificate

active

07826248

ABSTRACT:
Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state and setting a counter to zero. Then the method includes applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value and adding one to the counter. This step is repeated until either the counter reaches a predetermined number or until the high resistance state resistance value is greater than the lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value and adding one to the counter. The reverse resetting voltage pulse has a second polarity being opposite the first polarity. This step is repeated until either the counter reaches a predetermined number or until all the high resistance state resistance value is less than the upper resistance limit value.

REFERENCES:
patent: 2006/0097288 (2006-05-01), Baek
patent: 2007/0159867 (2007-07-01), Muraoka et al.
patent: 2007/0195590 (2007-08-01), Sugita
patent: 2007/0217084 (2007-09-01), Xue
patent: 2008/0123389 (2008-05-01), Cho et al.
patent: 2008/0212359 (2008-09-01), Muraoka et al.
patent: 1 418 592 (2004-05-01), None
patent: 1 426 975 (2004-06-01), None
PCT Search Report and Written Opinion dated Jun. 24, 2009.
Baek et al., Multi-Layer Cross-Point Binary Oxide Resistive Memory (OxRRAM) for Post-NAND Storage Application, 2005 IEEE.
Kozicki, et al., Non-Volatile Memory Based on Solid Electrolytes, Center for Solid State Electronics Research, Arizona State University.
Baikalov, et al., Field-Driven Hystertic and Reversible Resistive Switch . . . , Appl. Phys. Lett. 83, 957 (2003).
Fujii et al., Hysteretic Current-Voltage Characteristics and Resitance Switching . . . , Appl. Phys. Lett. 86, 012107 (2005).
Rozenberg, et al., Nonvolatile Memory with Multilevel Switching: A Basic Model, Physical Review Letters, vol. 92, No. 17, pp. 178302-1-178302-4.

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