Write operations for phase-change-material memory

Details Write operations for phase-change-material memory Write operations for phase-change-material memory

2011-07-19

2011-07-19

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S194000

Reexamination Certificate

active

07983069

ABSTRACT:
Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.

REFERENCES:
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 6768665 (2004-07-01), Parkinson et al.
patent: 6885602 (2005-04-01), Cho et al.
patent: 7242605 (2007-07-01), Choi et al.
patent: 7304885 (2007-12-01), Cho et al.

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