Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-05-17
2011-05-17
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S189160, C365S189070
Reexamination Certificate
active
07944730
ABSTRACT:
A method of writing to a resistive sense memory unit includes applying a first voltage across a resistive sense memory cell and a semiconductor transistor to write a first data state to the resistive sense memory cell. The first voltage forms a first write current for a first time duration through the resistive sense memory cell in a first direction. Then the method includes applying a second voltage across the resistive sense memory cell and the transistor to write a second data state to the resistive sense memory cell. The second voltage forms a second write current for a second duration through the resistive sense memory cell in a second direction. The second direction opposes the first direction, the first voltage has a different value than the second voltage, and the first duration is substantially the same as the second duration.
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Chen Yiran
Li Hai
Liu Hongyue
Wang Ran
Wang Xiaobin
Campbell Nelson Whipps LLC
Ho Hoai V
Norman James G
Seagate Technology LLC
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