Write driver for a magnetoresistive memory

Details Write driver for a magnetoresistive memory Write driver for a magnetoresistive memory

2005-01-11

2005-01-11

Phan, Trong (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06842365

ABSTRACT:
A write driver uses a reference current that is reflected to a driver circuit by a voltage. The driver circuit is sized in relation to the device that provides the voltage so that the current through the driver is a predetermined multiple of the reference current. This voltage is coupled to the driver circuit through a switch. The switch is controlled so that the driver circuit only receives the voltage when the write line is to have write current through it as determined by a decoder responsive to an address. The driver is affirmatively disabled when the write line is intended to not have current passing through it. As an enhancement to overcome ground bounce due to high currents, the input to the driver can be capacitively coupled to the ground terminal that experiences such bounce. Additional enhancements provide benefits in amplitude and edge rate control.

REFERENCES:
patent: 6341084 (2002-01-01), Numata et al.
patent: 6343032 (2002-01-01), Black et al.
patent: 6504752 (2003-01-01), Ito
patent: 6522575 (2003-02-01), Inui
patent: 6531723 (2003-03-01), Engel et al.
patent: 6545906 (2003-04-01), Savtchenko
patent: 6574137 (2003-06-01), Voshell et al.
patent: 6680862 (2004-01-01), Hidaka
patent: 6693824 (2004-02-01), Nahas et al.
patent: 6693882 (2004-02-01), Ito

Affiliated with

Also associated with

Rating

Write driver for a magnetoresistive memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Write driver for a magnetoresistive memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Write driver for a magnetoresistive memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3421003