Write driver circuit in phase change memory device and...

Details Write driver circuit in phase change memory device and... Write driver circuit in phase change memory device and...

2005-08-09

2005-08-09

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S148000, C365S211000

Reexamination Certificate

active

06928022

ABSTRACT:
A write driver circuit including a plurality of programmable fuses for a phase change memory device in which a write operation is correctly performed even in the case where a current output shift in a write current generation circuit; or in the case where a phase change memory cell having a phase change property shift due to an external factor or due a process change. The write driver circuit includes a write current control unit for outputting a first or second level of voltage selected, by selecting one of a first or second programmable current path, based on whether a first or second selection pulse signal is applied; and a current driving unit for generating a write current controlled by the output voltage of the write current control unit. Each of the first and second programmable current paths includes fuses that can be programmed to adjust their resistance to adjust the respective selected output voltage to compensate for the current output shift in the write current generation circuit or for the phase change memory cell having the phase change property shift.

REFERENCES:
patent: 6545907 (2003-04-01), Lowrey et al.
patent: 6605821 (2003-08-01), Lee et al.
patent: 6608773 (2003-08-01), Lowrey et al.
patent: 6781907 (2004-08-01), Marr
patent: 2003/0227790 (2003-12-01), Marr

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