Write current compensation using word line boosting circuitry

Details Write current compensation using word line boosting circuitry Write current compensation using word line boosting circuitry

2009-04-17

2010-12-21

Mai, Son L (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S148000, C365S158000, C365S171000, C365S230060

Reexamination Certificate

active

07855923

ABSTRACT:
Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.

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patent: 2010/0034009 (2010-02-01), Lu et al.

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