Write circuit of memory device

Details Write circuit of memory device Write circuit of memory device

2008-02-06

2010-10-12

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S207000, C365S201000, C365S189070, C365S225700

Reexamination Certificate

active

07813197

ABSTRACT:
A write circuit of a semiconductor memory device includes a global data input/output (I/O) line; an amplifying block for receiving and amplifying write data and transmitting the amplified write data as global data onto the global data I/O line; and a control block for comparing the write data with the global data to thereby disable the amplifying block when the write data and the global data have substantially the same data value.

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Taiwanese Office Action, with English translation, issued in Taiwanese Patent Application No. TW 095123714, mailed Jan. 9, 2009.

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