Write circuit of memory device

Details Write circuit of memory device Write circuit of memory device

2006-06-29

2008-03-18

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including signal comparison

C365S195000

Reexamination Certificate

active

07345930

ABSTRACT:
A write circuit of a semiconductor memory device includes a global data input/output (I/O) line; an amplifying block for receiving and amplifying write data and transmitting the amplified write data as global data onto the global data I/O line; and a control block for comparing the write data with the global data to thereby disable the amplifying block when the write data and the global data have substantially the same data value.

REFERENCES:
patent: 6778451 (2004-08-01), Takahashi et al.
patent: 7085171 (2006-08-01), Song
patent: 10-2006-0010197 (2006-02-01), None

Affiliated with

Also associated with

Rating

Write circuit of memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Write circuit of memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Write circuit of memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3960813