Write apparatus for DDR SDRAM semiconductor memory device

Details Write apparatus for DDR SDRAM semiconductor memory device Write apparatus for DDR SDRAM semiconductor memory device

2007-03-16

2008-12-09

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

C365S189050, C365S193000, C365S194000, C365S233130

Reexamination Certificate

active

07463534

ABSTRACT:
A writing apparatus of a semiconductor memory device includes a pulse generator, a latch unit and an output latch unit. The pulse generator outputs a first pulse every rising edge of a data strobe pulse and a second pulse every falling edge of the data strobe pulse, respectively. The latch unit latches data input every rising edge of the first pulse, latches data input every rising edge of the second pulse and the latched data, respectively, and allocates the latched data to first and second data lines. The output latch unit latches data, which are firstly allocated to the first and second data lines, in response to a first control signal, and latches data, which are secondly allocated to the first and second data lines, in response to a second control signal.

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Notice of Allowance for Korean patent app. 2006-34984.

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