World line segment select transistor on word line current...

Details World line segment select transistor on word line current... World line segment select transistor on word line current...

2007-02-20

2007-02-20

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetostrictive or piezoelectric

C365S066000, C365S225500

Reexamination Certificate

active

11103977

ABSTRACT:
The word line segment select transistor of a segmented word line array is placed on the word line current source side. This eliminates many undesirable effects currently associated with segmented word line MRAM arrays.

REFERENCES:
patent: 5315541 (1994-05-01), Harari et al.
patent: 5887002 (1999-03-01), Cooke et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6480437 (2002-11-01), Kato et al.
patent: 6490217 (2002-12-01), DeBrosse et al.
patent: 6512714 (2003-01-01), Hanzawa et al.
patent: 2002/0176272 (2002-11-01), DeBrosse et al.
patent: 2004/0047172 (2004-03-01), Komatsuzaki

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