Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1998-01-05
2000-12-26
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 71, 438729, H01L 2100, H05H 100
Patent
active
061653764
ABSTRACT:
A work is supported by a work support electrode arranged in a vacuum container, a treatment gas corresponding to intended treatment of the work is supplied into the container, and a vacuum is produced in the container. Plasma is formed from the gas by applying an amplitude-modulated high-frequency power to an electrode electrically insulated from the work support electrode, said amplitude-modulated high-frequency power being prepared by effecting amplitude modulation on a basic high-frequency power having a predetermined frequency in a range from 10 MHz to 200 MHz with a modulation frequency in a range from 1/1000 to 1/10 of said predetermined frequency. A positive pulse voltage is applied to the work support electrode to effect the treatment on the surface of the work supported by the work support electrode.
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patent: 5928528 (1999-07-01), Kubota et al.
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Kuwahara Hajime
Miyake Koji
Nakahigashi Takahiro
Dang Thi
Nissin Electric Co. Ltd.
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