Wordline voltage generation circuit and nonvolatile memory...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185180, C365S185190

Reexamination Certificate

active

07345923

ABSTRACT:
A wordline voltage generation circuit generates an incremental step pulse voltage and includes a first circuit unit connected to a program voltage, a second circuit unit connected between the first circuit unit and a divided voltage and controlled by a program step code, and a third circuit unit connected between the divided voltage and a ground voltage. An increment of the program voltage is set according to a resistance of the third circuit unit without a change in the program step code. The first circuit unit is symmetrical in structure to the third circuit unit, and an increment of the program voltage is set by controlling a relationship between a resistance of the first circuit unit and a resistance of the third circuit unit, while maintaining a start program voltage or a target program voltage at a fixed value without a change in the program step code.

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patent: 2006/0044923 (2006-03-01), Hahn et al.
patent: 11-031391 (1999-02-01), None
patent: 2000-195283 (2000-07-01), None
patent: 2004-146548 (2004-05-01), None
patent: 10-2003-0089314 (2003-11-01), None

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